Front Cover	1
	Carrier Scattering in Metals and Semiconductors	4
	Copyright Page	5
	Table of Contents	14
	Preface to the series	8
	Preface	10
	Chapter 1. Quasi-Particles in an Ideal Crystal	20
	1.1. Band structure	20
	1.2. Quasi-particles	31
	1.3. Band structure of cubic semiconductors at the center of the Brillouin zone	41
	Chapter 2. Scattering	54
	2.1. Scattering mechanisms	54
	2.2. Transition probability and the principle of detailed balance	57
	2.3. Scattering cross section	61
	2.4. Relaxation and fluctuation characteristics of a test particle	65
	2.5. The relaxation time approximation. The Boltzmann integral as a current in k-space	72
	2.6. The method of correlators	75
	Chapter 3. Electron–phonon interaction	82
	3.1. Matrix element of a one-phonon process	82
	3.2. The macrofield and microfield as two causes of scattering	86
	3.3. Screening	89
	3.4. Deformation potential	93
	3.5. Macrofields	98
	3.6. Matrix elements for scattering by long-wavelength phonons	102
	3.7. Scattering by phonons in the pseudopotential method	103
	Chapter 4. Scattering by long-wavelength phonons in a simple band	106
	4.1. Matrix elements	106
	4.2. Kinematics of scattering	110
	4.3. Relaxation times in a Boltzmann gas	117
	4.4 Relaxation times in a Fermi gas	122
	4.5. Fluctuation–dissipation theorem for quasi-elastic scattering	126
	Chapter 5. Scattering by phonons in an anisotropic electron band	128
	5.1. Deformation potential scattering in an ellipsoidal valley	128
	5.2. Intervalley scattering	137
	5.3. Intervalley scattering experiments	143
	5.4. Diffusion on the Fermi surface	147
	Chapter 6. Electron–electron scattering and the electron temperature	151
	6.1. Probability of electron–electron scattering	151
	6.2. Characteristics of test electron scattering by an electron gas	153
	6.3. Effect of electron–electron scattering on the distribution function	162
	6.4. Electron temperature relaxation	169
	6.5. Effect of electron–electron scattering on the oscillating photoresponse	177
	6.6. Electron temperature relaxation time measurement	180
	Chapter 7. Relaxation characteristics of kinetic effects	187
	7.1. Distribution function perturbation in various types of experiments	187
	7.2. Averaging over energies	194
	7.3. Mobility in semiconductors	198
	7.4. Umklapp collisions	201
	7.5. Relaxation upon mutual scattering of various types of carriers	207
	7.6. Temperature dependences of kinetic effects in metals and semimetals	212
	Chapter 8. Two-phonon processes	220
	8.1. Probabilities of two-phonon transitions	220
	8.2. Real and virtual transitions. Compound scattering	224
	8.3. Interaction with short-wavelength phonons	231
	Chapter 9. Scattering by impurities	234
	9.1. Neutral impurities in semiconductors	234
	9.2. Charged impurities in semiconductors	237
	9.3. Partial phase shifts in metals	244
	9.4. Resonant scattering by virtual d-levels	252
	Chapter 10. Scattering by dislocations	260
	10.1. Scattering diameter	260
	10.2. Experimental investigations	266
	Chapter 11. Scattering by a crystal surface	272
	11.1. General definitions	272
	11.2. Coherent scattering	273
	11.3. Observation of coherent scattering	281
	11.4. Incoherent scattering	288
	Chapter 12. Scattering in a degenerate band and in a multiband model	294
	12.1. Matrix elements for quasi-particle scattering by phonons	294
	12.2. Overlap factors	298
	12.3. The isotropic model for hole scattering by phonons in a degenerate band	301
	12.4. Cyclotron resonance of hot holes in germanium	306
	12.5. Scattering by the deformation potential of acoustic phonons in the multiband model	310
	12.6. Interband transitions with LO-phonon emission	316
	12.7. Electron scattering by holes	320
	12.8. Scattering by ionized impurities	322
	Chapter 13. Spin-flip induced by spin–orbit interaction	325
	13.1. Spin-flip time	325
	13.2. Scattering by nonmagnetic impurities	327
	13.3. Scattering by phonons	335
	13.4. Precession mechanism of spin relaxation	338
	13.5. Spin relaxation in metals – experimental data	340
	13.6. Spin relaxation in semiconductors – experimental data	349
	13.7. Spin-flip at a surface	357
	Chapter 14. The effect of a magnetic field on scattering	359
	14.1. States in a magnetic field and the description of scattering	359
	14.2. The effect of Larmor motion on relaxation	364
	14.3. Scattering by acoustic phonons in an ultraquantum field – Boltzmann gas	372
	14.4. Scattering by phonons in a quantized Fermi gas	380
	14.5. Resonance inelastic scattering	387
	14.6. Static imperfections	391
	14.7. Electron–electron scattering in the ultraquantum limit	395
	14.8. Spin-flip is a quantizing magnetic field – Kane model	402
	Chapter 15. Exchange and spin interaction	409
	15.1. Interaction between a conduction electron and a magnetic atom	409
	15.2. Scattering by a spin lattice	412
	15.3. Magnetic impurities	424
	15.4. Skew scattering	428
	15.5. Electron spin relaxation in exchange interaction with holes	436
	Appendix: Parameters of certain semiconductor materials	445
	References	448
	Author index	456
	Subject index	462
	Materials index	466
	Cumulative index	470